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SUP/SUB65P04-15
Vishay Siliconix
P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
? TrenchFET ? Power MOSFET
V DS (V)
- 40
R DS(on) ( Ω )
0.015 at V GS = - 10 V
0.023 at V GS = - 4.5 V
I D (A)
- 65
- 50
? Compliant to RoHS Directive 2002/95/EC
DRAIN connected to TAB
TO-263
G
S
G
D S
Top View
G D S
Top View
SUP65P04-15
SUB65P04-15
D
Ordering Information: SUP65P04-15-E3 (Lead (Pb)-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Limit
- 40
± 20
Unit
V
Repetitive Avalanche Energy
Continuous Drain Current (T J = 175 °C)
Pulsed Drain Current
Avalanche Current
a
Power Dissipation
T C = 25 °C
T C = 125 °C
L = 0.1 mH
T C = 25 °C (TO-220AB and TO-263)
T A = 25 °C (TO-263) b
I D
I DM
I AR
E AR
P D
- 65
- 37
- 240
- 60
180
120 c
3.75
A
mJ
W
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263) b
Free Air (TO-220AB)
R thJA
R thJA
R thJC
40
62.5
1.25
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. When mounted on 1" square PCB (FR-4 material).
c. See SOA curve for voltage derating.
Document Number: 71174
S11-2308-Rev. B, 21-Nov-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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